CERAMIC METALLIZATIONS
Complete Hermetics provides custom metallized ceramic components and services for electrical, mechanical, and vacuum applications from R/D and small runs to high volume production.
Capable of working temperatures up to 800°C, excellent hermetic capabilities in range of 1x10-9 atm/cc/sec Helium, and bonding strength up to 10,000 PSI range depending on the substrate.
Most Oxide Ceramics:
- Aluminum Oxide (Al2O3)
- Borides
- Carbides
- Nitrides
- Etcetera
Non-Oxide Ceramics:
- Aluminum Nitride (AlN)
- Silicon Carbide (SiC)
- Boron Carbide (B4C)
- Silicon Nitride (Si3N4)
- Etcetera
Complete Hermetics Also Provide Metallizations on:
- Carbon & Carbon Composites, Graphite & Composites, Diamonds
- Sapphires, and Glasses
Thick Film Metallizations
Complete Hermetics specialize in screen printable Molybdenum Manganese thich film metallization used as a surface
conductor on:
- Aluminum Oxide (Al2O3), Zirconium Dioxide (ZrO2), Glass-Ceramics, Forsterite, etc.
- Aluminum Nitride, Silicon Nitride, Silicon Carbide, etc.
Mo-Mu Thick Film:
- 500-1500 µ " (13-38 µm)
- 1300ºC-1500ºC in hydrogen⁄mitrogen controlled atmosphere
Nickel Plating:
- 100-400 µ " (25-10 µm)
Complete Hermetic also provide screen printable Tungstein metallizing compositions used for buried electrode layers in multiplyer ceramics. Typical firing cycle are1300ºC-1700ºC. Thick film ink also available for Ag, Ag-Pd, Ag-Pt, Au, Cu, Ni, etc.
Thin Film Metallizations
Thin Film Substrates
- Optic windows such as Sapphire, Quartz, Glass, Fused Silica, Zinc Selenide, Barium Floride, etc.
- Al2O3, SiC, BeO, YSZ, etc.
Partial Customer List:
